Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• thermoelectrical voltage. The Seebeck coefficient measurements were made in the range from 25 to 125 °C. The thermoelectrical voltage as a function of the temperature difference measured between two opposite electrical contacts is shown in Figure 1. The Seebeck coefficient (+82.14 μV) testified the p-type

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• ]. The main obstacle is, however, to create effective, stable, as well as affordable TE materials. The efficiency of TE materials and devices is quantified by the dimensionless figure of merit (ZT) which is represented by where S, σ, κtot, κe, κl, and T represent the Seebeck coefficient, total electrical

• hierarchical architecture [2][11][12] as well as through nanostructuring [13][14][15]), retaining the hole mobility [16][17], and by improving the value of the Seebeck coefficient (by tuning the band structure [18] along with a large conduction (valence) band convergence [19][20], electron energy barrier

• understand the thermoelectric (TE) response and applicability of the cubic π-SnSe alloy, we employed the semiclassical Boltzmann transport theory to determine the Seebeck coefficient (S), the electrical conductivity (σ/τ), as well as the electronic part of the thermal conductivity (κe/τ) by applying the

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• biocompatibility, photothermal efficiency, low Seebeck coefficient, as well as good conductivity. They synthesized tantalum carbide MXene sheets from a tantalum aluminum carbide (Ta4AlC3) MAX phase through etching the intermediate aluminium with the aid of hydrofluoric acid (HF). Analysis of the synthesized

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• metal-assisted etching technique. After fabrication, a thermal diffusion process is used for doping the nanowire forest with phosphorous. A suitable experimental technique has been developed for the measurement of the Seebeck coefficient under static conditions, and results are reported for different

• conductivity of nanostructures, will yield a high efficiency of the conversion of thermal to electrical energy. Keywords: nanowires; Seebeck coefficient; thermal conductivity; thermoelectricity; Introduction Thermoelectric generators for direct conversion of heat into electrical power will certainly play a

• sustainable. Silicon has a very high power factor S2σ [1][2][3][4] (S is the Seebeck coefficient and σ is the electrical conductivity). This, combined with the reduced thermal conductivity when nanostructured [5][6][7][8][9][10], makes it very suitable for thermoelectric applications. As added value, silicon

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• measured by a figure of merit (ZT) defined as ZT = S2σT/κ, where S, σ, T and κ represent the Seebeck coefficient, electrical conductivity, temperature and thermal conductivity, respectively [2][3]. In the past decade, great efforts have been made to boost the capabilities of thermoelectric materials

• to obtain converged results. Based on the framework of Boltzmann transport theory, the electrical conductivity, σ, and the Seebeck coefficient, S, can be expressed as: where the u is the chemical potential (corresponding to the carrier concentration), kB is the Boltzmann constant, e is the electron

• to exhibit a giant Seebeck coefficient and low electrical conductivity. The discrepancies between the results obtained using the PBE potential and the HSE06 hybrid functional are inconspicuous concerning the Seebeck coefficient and the electrical conductivity. Considering the extremely slow speed of

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• efficiency of the material could be expressed in terms of figure-of-merit, ZT, defined as dimensionless quantity ZT = S2·σ·T/κ , where S is the thermopower (Seebeck coefficient), σ is the electrical conductivity, T is the absolute temperature and κ is the thermal conductivity. There were many concepts for

• filtering effect [15][16][17]. The potential energy barrier connected with a metallic NP (Schottky barrier) or a multi-phase interface could scatter low-energy electrons more effectively than high-energy electrons [18]. This, in turn, results in an enhancement of the Seebeck coefficient with virtually no

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• surprising since is too small to produce any smearing of the Kondo resonance [36]. The Seebeck coefficient S can be calculated from the dI/dV data as a function of the temperature, obtained at constant height with an open feedback loop [37]: where σ(V) is the differential conductance and Σ(V) is its

• derivative. The conductance is given in Figure 3e, in a small interval around the Fermi energy. The calculation by means of Equation 1 yieds the non-linear Seebeck coefficient S that is found to increase with ΔT, as shown in Figure 3f. For example it is found that S doubles from ΔT = 2.0 K to ΔT = 6.0 K for

• values (vertical doted line). (f) Seebeck coefficient as a function of the sample temperature Ts extracted from the value measured in (e). dI/dV spectra of the MnPc molecular junction with (a) decreasing and then (b) increasing gap resistance, respectively. The gap resistance is controlled by adjusting

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• incorporated in Bi2Te3 annealed at 773 K shows mainly hexagonally shaped structures with particle sizes of 2–20 nm and 40–80 nm (for 5 wt % Ag) and 10–60 nm (for 20 wt % Ag). Interestingly, the samples annealed at 573 K show the highest Seebeck coefficient (S, also called thermopower) at room temperature (p

• = S2σT/k) and to enhance figure of merit (ZT), one needs to increase the power factor (S2σ, where S is the Seebeck coefficient or thermopower, σ is the electrical conductivity) or to decrease thermal conductivity (k). In bulk, all three parameters (S, σ, k) are interdependent. In bulk Bi2Te3, ZT is close

• enhancement of the Seebeck coefficient for a given carrier concentration. Several groups have used this approach using different metal–semiconductor combinations to improve thermoelectric properties [13][14]. One group has reported the synthesis of bismuth metal nanoparticles (NPs) were through a solvothermal

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

• mean free path, and x is the stack position. The Peltier heat associated with the tunneling electrons is modeled using: where is the tunneling current density, and S and T are the Peltier coefficients (S is the Seebeck coefficient, T is the temperature) on either side of the junction. The heat

Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

• Stefan Kolenda,
• Peter Machon,
• Detlef Beckmann and
• Wolfgang Belzig

Beilstein J. Nanotechnol. 2016, 7, 1579–1585, doi:10.3762/bjnano.7.152

• linear regime, i.e., for V → 0 and δT → 0, Equation 1 can be written as where g is the conductance, T is the average temperature, and η describes the thermoelectric current. η is related to the Seebeck coefficient S = −V/δT measured in an open circuit by η = SgT. In general, however, Ic is a nonlinear

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• into the Seebeck coefficient S = −ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the

• Seebeck coefficient S = −ΔV/ΔT, where ΔV is the thermo-voltage and ΔT is the temperature difference. In general S is a function of energy and temperature: Here EF is the Fermi energy, τ(E) is the transmission function, e is the electron charge, kB is the Boltzmann constant and T the temperature of the

• combination allows the determination of the Seebeck coefficient of atomic-scale devices, which will lead to a better understanding of charge transport in these systems. The set-up is also suitable for measuring the thermopower of single-molecule contacts as well as to be operated at variable base temperature

Charge and heat transport in soft nanosystems in the presence of time-dependent perturbations

• Alberto Nocera,
• Carmine Antonio Perroni,
• Vincenzo Marigliano Ramaglia and
• Vittorio Cataudella

Beilstein J. Nanotechnol. 2016, 7, 439–464, doi:10.3762/bjnano.7.39

• thermoelectric properties. For example, the Seebeck coefficient is given by S = −GS/G, where the charge conductance G has been defined in Equation 45, and with f(ω) the free Fermi distribution. Then, we will calculate the electron thermal conductance , with In order to estimate the thermal conductance, one can

Thermoelectricity in molecular junctions with harmonic and anharmonic modes

• Bijay Kumar Agarwalla,
• Jian-Hua Jiang and
• Dvira Segal

Beilstein J. Nanotechnol. 2015, 6, 2129–2139, doi:10.3762/bjnano.6.218

• electrical and thermal conductances are sensitive to whether the mode is harmonic/anharmonic, the Seebeck coefficient, the thermoelectric figure-of-merit, and the thermoelectric efficiency beyond linear response, conceal this information. Keywords: counting statistics; efficiency; molecular junctions

• thermopower, a linear response quantity, also referred to as the Seebeck coefficient, is utilized as an independent tool for probing the energetics of molecular junctions [17][18][19][20][21][22][23][24]. Experimental efforts identified orbital hybridization, contact-molecule energy coupling and geometry, and

• -resonance situation, ε0 > kBT, Γ (Figure 3). We find that the electrical and thermal conductances strongly fall off with ε0, but the Seebeck coefficient displays a non-monotonic structure, with a maximum showing up off-resonance [48], resulting in a similar enhancement of ZT around ε0 = 0.2. It can be

Simple and efficient way of speeding up transmission calculations with k-point sampling

• Jesper Toft Falkenberg and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2015, 6, 1603–1608, doi:10.3762/bjnano.6.164

• -points are needed due to the rapid variations of these functions for individual k-points [6]. Certain quantities, for example the Seebeck coefficient and thermo-electric figure of merit (ZT), are based on the detailed behavior of the transmission [7][8] and thus exceedingly sensitive to energy and k

Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

• /κ) where S is the Seebeck coefficient, which depends on the asymmetry of the density of states around the Fermi level, G is the electrical conductance and T is the temperature [7]. Similarly, the electronic thermoelectric figure of merit also is defined as ZTe = S2GT/κe. Since the efficiency of a

• thermoelectric device can be enhanced by increasing the power factor (S2GT) or by decreasing the thermal conductance, there is a need to simultaneously increase the Seebeck coefficient and electrical conductance, while reducing in thermal conductance. Since these factors are correlated, increasing ZT to values

• electronic contribution to the thermal conductance κ(T), the thermopower (Seebeck coefficient) S(T) and the Peltier coefficient Π(T) of a junction as a function of the temperature T can be obtained by calculating the transmission probability T(E) of the electrons with energy E passing from one electrode to

Multiscale modeling of lithium ion batteries: thermal aspects

• Arnulf Latz and
• Jochen Zausch

Beilstein J. Nanotechnol. 2015, 6, 987–1007, doi:10.3762/bjnano.6.102

• chemical potentials , electrical or Galvani potentials Φ. This form can be easily obtained from Equation 36 and Equation 37: The conductivity κ and the transference numbers are given by the components of the mobility matrix Note that t+ + t− = 1. The Seebeck coefficient β is defined by It is related to the

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• a circuit made of different materials and subjected to a temperature gradient. The Seebeck coefficient S, also indicated as thermopower, can be written as: A precise expression for S takes into account the temperature gradient ∂T/∂x and the generated electric field ε = −∂V/∂x at the electrical

• the two heat sources TH and TC: η = ΔT/TH, i.e., the Carnot limit. The development of a good thermoelectric material should aim to obtain a factor Z = S2σ/kt as high as possible: A good thermoelectric material should have high Seebeck coefficient S and electrical conductivity σ, and small thermal

• leads to the maximization of the power that a TEG can deliver to the load. In this respect, graphene [11] could offer interesting opportunities, in particular for its high electrical conductivity σ. The Seebeck coefficient of pristine graphene is of the order of 10–100 μV/K [12][13]. Several solutions

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• ) performance of a material, including the thermal conductivity κ, the electrical conductivity σ and the Seebeck coefficient S. Further, the efficiency of a thermoelectric device depends on the thermoelectric power factor (TPF) and the figure of merit (ZT) of the material, which are defined as S2σ and S2Tσ/κ

• , the morphology of the latter appears more regular and uniform over the entire substrate. In this perspective, we should consider that Seebeck coefficient, thermal and electrical conductivity could vary depending on the nanowires direction respect to the longitudinal axis. However, it should be

• . From our experimental data, the generated voltages can be plotted as a function of the applied temperature difference, as show in Figure 1d in order to estimate the Seebeck coefficient of the materials. For all of the nanostructures obtained at different temperatures the Seebeck coefficient has been

Structural and thermoelectric properties of TMGa₃ (TM = Fe, Co) thin films

• Sebastian Schnurr,
• Ulf Wiedwald,
• Paul Ziemann,
• Valeriy Y. Verchenko and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 461–466, doi:10.3762/bjnano.4.54

• ≤ 300 K. Keywords: amorphous metal films; energy related; intermetallic compounds; nanomaterials; Seebeck coefficient; thermoelectric properties; thin metal films; Introduction Intermetallic compounds usually behave as metals. In some cases, however, when a compound contains both, d- and p-block

• annealing in order to improve film crystallinity. In the present study with its emphasis on thermoelectric properties of the (TM)Ga3 films, the related figure of merit [10] ZT = S2σT/λ (S: Seebeck coefficient, σ: electrical conductivity, λ: thermal conductivity, T: Kelvin temperature) indicates that low

• thermal conductivities may be of advantage in combination with reasonable high electrical conductivities. While the Seebeck coefficient is mostly dominated by asymmetric features of the electronic density of states N(E) around EF, σ and λ are influenced by both, electronic properties like N(EF) and the

Synthesis and thermoelectric properties of Re₃As_6.6In_0.4 with Ir₃Ge₇ crystal structure

• Valeriy Y. Verchenko,
• Anton S. Vasiliev,
• Alexander A. Tsirlin,
• Vladimir A. Kulbachinskii,
• Vladimir G. Kytin and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 446–452, doi:10.3762/bjnano.4.52

• . Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit

• is the absolute temperature, S the Seebeck coefficient, σ the electrical conductivity, and κ the thermal conductivity. It is shown in the literature [1] that the best thermoelectric materials are to be sought among narrow-gap semiconductors composed of heavy elements, in which structural features

• theoretical density. This pellet was used to measure the electrical conductivity (σ), the Seebeck coefficient (S), and the thermal conductivity (κ) in the temperature range of 77–300 K in a home-built setup. Resistance was determined from the voltage drops by applying a four-probe method in accordance with

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• due to theoretical studies predicting a large enhancement of the thermoelectric efficiency, given by the so-called figure of merit ZT, ZT = S2·σ·T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity and T is the temperature. The power factor (S2σ) of

Revealing thermal effects in the electronic transport through irradiated atomic metal point contacts

• Bastian Kopp,
• Zhiwei Yi,
• Daniel Benner,
• Fang-Qing Xie,
• Christian Obermair,
• Thomas Schimmel,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 703–711, doi:10.3762/bjnano.3.80

• its sign, when the position of the warmer contact is switched, in agreement with the behaviour shown in Figure 7b. For the combination Au–Ag, as was used here, the Seebeck coefficient is rather small, i.e., 0.3 µV/K. Nevertheless the effect is readily observable. The maximum signal in Figure 7a